1 si photodiode suitable for lead-free solder re ow, operating/storage temperature: -40 to +125 c s9674 www.hamamatsu.com absolute maximum ratings electrical and optical characterisitcs (ta=25 c) parameter symbol value unit reverse voltage v r max. 10 v operating temperature topr -40 to +125 c storage temperature tstg -40 to +125 c suitable for lead-free solder re ow (re ow peak temperature: 260 c, jedec level 4) surface mount type, small and thin leadless package high reliability for automotive applications operating/storage temperature: -40 to +125 c photosensitive area: 2 2 mm high sensitivity: 0.7 a/w ( =960 nm) s9674 is a highly reliable photodiode designed for in-vehicle applications and is compatible with lead-free solder re ow pro- cesses. the newly developed small, thin leadless package allows reducing the mount area on a printed circuit board. automotive devices (for rain sensor and sun sensor, etc.) features applications parameter symbol condition min. typ. max. unit spectral response range - 320 to 1100 - nm peak sensitivity wavelength p - 960 - nm photo sensitivity s = p 0.6 0.7 - a/w short circuit current isc 100 lx , 2856 k - 4.8 - a temperature coef cient of isc - - +0.1 - %/ c half-value angle - - 60 - degree dark current i d v r =5 v - 0.005 1 na temperature coef cient of i d t cid - 1.12 - times/c rise time tr v r =0 v, r l =1 k 10 to 90% -2- s terminal capacitance ct v r =0 v, f=10 khz - 450 - pf
2 si photodiode s9674 spectral response terminal capacitance vs. reverse voltage directivity dark current vs. reverse voltage wavelength (nm) (typ. ta=25 c) photo sensitivity (a/w) 600 200 800 400 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1000 1200 qe=100 % reverse voltage (v) terminal capacitance 0.1 1 10 10 pf 100 pf 1 nf 10 nf 100 (typ. ta=25 c) relative sensitivity (%) 100 0 20 40 60 80 20 90 90 80 70 60 50 40 30 20 10 0 10 20 30 40 50 60 70 80 40 60 80 100 (typ. ta=25 c, light source: tungsten lamp) reverse voltage (v) dark current 0.01 0.1 1 10 100 fa 1 pa 10 pa 1 na 100 pa 100 (typ. ta=25 c) kspdb0248ea kspdb0251ea kspdb0249ea kspdb0250eb
3 cat. no. kspd1070e03 jun. 2011 dn www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81- 733, fax: (39) 02-935-81-741 information described in this material is current as of june, 2011. product specifications are subject to change without prior notice due to improvements or other reasons. before assembly into final products, please contact us for the delivery specification sheet to check the latest information. type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovere d and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. si photodiode s9674 dimensional outline (unit: mm) 5.7 4.6 (4.1) 3.1 (0.55) 0.85 1.4 0.2 4.0 2.5 0.8 photosensitive area (2 2) cathode index photosensitive surface photosensitive surface (2 ) r0.3 recommended land pattern tolerance unless otherwise noted: 0.15, 2 (6.5) (3.2) (2.8) 3.3 1.05 1.05 kspda0179ec
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